i nchange semiconductor isc product specification isc website isc & iscsemi is registered trademark 1 isc silicon p n p power transistor 2 s b 850 description c ollector - emitter breakdown voltage - : v ( br )ceo = - 4 0v( min ) low c ollector - emitter saturation voltage - : v ce( sat ) = - 1. 2 v( m ax) @i c = - 5 a wide area of safe operation complement to t ype 2 s d 1117 applications designed for a udio a mplifier , series regulators and general purpose power amplifiers . a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage - 4 0 v v ceo collector - e mitter v oltage - 4 0 v v ebo emitter - b ase v oltage - 7 v i c collector c urrent - continuous - 10 a i b base c urrent - continuous - 2 a p c collector p ower d issipat i on @ t c =25 50 w t j junction temperature 150 t stg storage temperature range - 55 ~ 150 thermal characteristics symbol parameter max unit r th j - c thermal r esistance , j unction t o case 2.5 /w
i nchange semiconductor isc product specification isc website isc & iscsemi is registered trademark 2 isc silicon pnp power t ransistor 2 sb 850 electrical characteristics t c =25 v (br) ceo collector - e mitter breakdown v oltage i c = - 1 0m a; i b = 0 - 4 0 v v (br) c b o collector - base breakdown v oltage i c = - 0.1m a; i e = 0 - 40 v v (br)eb o e mitter - base breakdown v oltage i e = - 0.1m a; i c = 0 - 7 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 5 a ; i b = - 0.5 a - 1.2 v v b e ( sat ) base - e mitter s aturation v oltage i c = - 5 a ; i b = - 0.5 a - 2.0 v i c b o collector c utoff c urrent v c b = - 4 0 v ; i e = 0 - 10 a i eb o e mitter c utoff c urrent v eb = - 7 v ; i c = 0 - 10 a h fe dc c urrent g ain i c = - 2 a; v ce = - 5 v 40 240
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